IRG7CH50K10EF - IGBT CHIP WAFER

Fabricant Nimewo Pati

IRG7CH50K10EF

Entèn Nimewo Pati

ABC-IRG7CH50K10EF

Fabricant

Infineon Technologies

Kout Deskripsyon

IGBT CHIP WAFER

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

175656 Pieces

referans pri

~~USD 2.12958~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IRG7CH50K10EF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRG7CH50K10EF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRG7CH50K10EF

Fabricant : Infineon Technologies

Deskripsyon : IGBT CHIP WAFER

Seri : -

Estati Pati : Active

Kalite IGBT : Trench Field Stop

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 35A

Kouran - Pèseptè batman (Icm) : -

Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 25A

Pouvwa - Max : -

Oblije chanje enèji : -

Kalite Antre : Standard

Gate chaje : 170nC

Td (on / off) @ 25 ° C : 50ns/280ns

Kondisyon egzamen an : 600V, 35A, 10 Ohm, 15V

Ranvèse Tan Reverse (trr) : -

Operating Tanperati : -40°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : Die

Pake Aparèy Founisè : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRG7 , IRG7CH

dokiman pou IRG7CH50K10EF

Fich : IRG7CH50K10EF.pdf

pwodwi ki gen rapò pou IRG7CH50K10EF Infineon Technologies

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