IGLD60R070D1AUMA1 - IC GAN FET 600V 60A 8SON

Fabricant Nimewo Pati

IGLD60R070D1AUMA1

Entèn Nimewo Pati

ABC-IGLD60R070D1AUMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

IC GAN FET 600V 60A 8SON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

76219 Pieces

referans pri

~~USD 7.97489~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IGLD60R070D1AUMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IGLD60R070D1AUMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IGLD60R070D1AUMA1

Fabricant : Infineon Technologies

Deskripsyon : IC GAN FET 600V 60A 8SON

Seri : CoolGaN™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 2.6mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -10V

Antre kapasite (Ciss) (Max) @ Vds : 380pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 114W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-LSON-8-1

Pake / Ka : 8-LDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IGLD6 , IGLD60R0

dokiman pou IGLD60R070D1AUMA1

Fich : IGLD60R070D1AUMA1.pdf

pwodwi ki gen rapò pou IGLD60R070D1AUMA1 Infineon Technologies

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