FQB34P10TM-F085P - PMOS D2PAK 100V 60 MOHM

Fabricant Nimewo Pati

FQB34P10TM-F085P

Entèn Nimewo Pati

ABC-FQB34P10TM-F085P

Fabricant

ON Semiconductor

Kout Deskripsyon

PMOS D2PAK 100V 60 MOHM

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

41782 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen FQB34P10TM-F085P nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FQB34P10TM-F085P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQB34P10TM-F085P

Fabricant : ON Semiconductor

Deskripsyon : PMOS D2PAK 100V 60 MOHM

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 33.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 60 mOhm @ 16.75A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 2910pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.75W (Ta), 155W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQB34 , FQB34P10

dokiman pou FQB34P10TM-F085P

Fich : FQB34P10TM-F085P.pdf

pwodwi ki gen rapò pou FQB34P10TM-F085P ON Semiconductor

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