PMZB350UPE,315 - MOSFET P-CH 20V 1A 3DFN

Fabricant Nimewo Pati

PMZB350UPE,315

Entèn Nimewo Pati

ABC-PMZB350UPE,315

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET P-CH 20V 1A 3DFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

5740525 Pieces

referans pri

~~USD 0.05702~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen PMZB350UPE,315 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PMZB350UPE,315

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PMZB350UPE,315

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET P-CH 20V 1A 3DFN

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 450 mOhm @ 300mA, 4.5V

Vgs (th) (Max) @ Id : 950mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 1.9nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 127pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 360mW (Ta), 3.125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DFN1006B-3

Pake / Ka : 3-XFDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PMZB , PMZB350

dokiman pou PMZB350UPE,315

Fich : PMZB350UPE,315.pdf

pwodwi ki gen rapò pou PMZB350UPE,315 Nexperia USA Inc.

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