ZXMN6A11GTA - MOSFET N-CH 60V 3.1A SOT223

Fabricant Nimewo Pati

ZXMN6A11GTA

Entèn Nimewo Pati

ABC-ZXMN6A11GTA

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET N-CH 60V 3.1A SOT223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1865941 Pieces

referans pri

~~USD 0.17542~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen ZXMN6A11GTA nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou ZXMN6A11GTA

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : ZXMN6A11GTA

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET N-CH 60V 3.1A SOT223

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.1A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 120 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.7nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 330pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-223

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ZXM , ZXMN6

dokiman pou ZXMN6A11GTA

Fich : ZXMN6A11GTA.pdf

pwodwi ki gen rapò pou ZXMN6A11GTA Diodes Incorporated

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