FQB17N08LTM - MOSFET N-CH 80V 16.5A D2PAK

Fabricant Nimewo Pati

FQB17N08LTM

Entèn Nimewo Pati

ABC-FQB17N08LTM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 80V 16.5A D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

112224 Pieces

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pri nou

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Espesifikasyon pou FQB17N08LTM

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQB17N08LTM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 80V 16.5A D2PAK

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 100 mOhm @ 8.25A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 11.5nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 520pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.75W (Ta), 65W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQB , FQB17

dokiman pou FQB17N08LTM

Fich : FQB17N08LTM.pdf

pwodwi ki gen rapò pou FQB17N08LTM ON Semiconductor

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