NP40N10PDF-E1-AY - MOSFET N-CH 100V 40A TO-263

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NP40N10PDF-E1-AY

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ABC-NP40N10PDF-E1-AY

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Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 100V 40A TO-263

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Nimewo pati : NP40N10PDF-E1-AY

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 100V 40A TO-263

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 27 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 71nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3150pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.8W (Ta), 120W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263 (D²Pak)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NP40N , NP40N10P

dokiman pou NP40N10PDF-E1-AY

Fich : NP40N10PDF-E1-AY.pdf

pwodwi ki gen rapò pou NP40N10PDF-E1-AY Renesas Electronics America

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