IX2120B - 1200V HIGH AND LOW SIDE GATE DRI

Fabricant Nimewo Pati

IX2120B

Entèn Nimewo Pati

ABC-IX2120B

Fabricant

IXYS Integrated Circuits Division

Kout Deskripsyon

1200V HIGH AND LOW SIDE GATE DRI

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

255388 Pieces

referans pri

~~USD 1.425~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

ABC Semiconductor gen IX2120B nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IX2120B

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IX2120B

Fabricant : IXYS Integrated Circuits Division

Deskripsyon : 1200V HIGH AND LOW SIDE GATE DRI

Seri : -

Estati Pati : Active

Kondwi konte genyen : Half-Bridge

Kalite Chèn : Independent

Kantite Chofè yo : 2

Kalite Gate : IGBT, N-Channel MOSFET

Voltage - Pwovizyon pou : 15V ~ 20V

Vòltaj lojik - VIL, VIH : 6V, 9.5V

Kouran - Peak Sòti (Sous, Lavabo) : 2A, 2A

Kalite Antre : Non-Inverting

Segondè Voltage Side - Max (Bootstrap) : 1200V

Rise / Fall Time (Tip) : 9.4ns, 9.7ns

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 28-SOIC (0.295", 7.50mm Width)

Pake Aparèy Founisè : 28-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IX , IX2

dokiman pou IX2120B

Fich : IX2120B.pdf

pwodwi ki gen rapò pou IX2120B IXYS Integrated Circuits Division

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